Enhancement of Silicon Photon Emission with Nanostructure Array
نویسندگان
چکیده
A Raman scattering enhancement factor up to 4.2 normalized with pure silicon has been achieved by applying the electron beam lithography (EBL) technique to build silicon nanostructure array. Several mechanisms are adopted to explain and discuss the enhancement phenomenon . Through the improvement on the adjustability, uniformity, and stability of the structures, it is expected that a more robust and versatile alternative for the porous silicon materials can be obtained. Although the main purpose of the research is to enhance the light emission efficiency of the silicon materials, an improvement of the Raman measurement sensitivity has also been noticed.
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